Photoluminescence enhancement of Si nanocrystals embedded in SiO2 matrix by CeF3 doping

Fang, Y. C.; Zhang, Z. J.; Xie, Z. Q.; Zhao, Y. Y.; Lu, M.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191919
Academic Journal
Ce3+ ions were doped into Si nanocrystals (nc-Si) embedded in SiO2 matrix (nc-Si/SiO2) by evaporation of CeF3 powder onto the surface of nc-Si/SiO2 and followed by thermal annealing in nitrogen ambient at different temperatures. Photoluminescence (PL) properties of the doped samples were studied. It has been found that the PL intensity of nc-Si can be remarkably enhanced and the enhancement depends on the doping concentration. Photoluminescence excitation spectra of the doped and undoped nc-Si imply that the enhancement comes from energy transfer from Ce3+ ions to nc-Si when excitation wavelength ranges from 240 to 320 nm.


Related Articles

  • Observation of the gap blueshift on Gd2O3:Eu3+ nanoparticles. Mercier, Bruno; Dujardin, Christophe; Ledoux, Gilles; Louis, Cédric; Tillement, Olivier; Perriat, Pascal // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p650 

    We report on the characterization of Gd2O3 nanocrystals of different sizes doped with 2.5 at. % Eu3+ ions. The particles have been synthesized by a sol-lyophilisation process. This method allows the synthesis of 7–100 nm diameter cubic-phase particles. The photoluminescence properties...

  • Symmetry of optically active Yb-related centers in InP and In1-xGaxP (x≤0.13). Buyanova, I. A.; Neuhalfen, A. J.; Wessels, B. W.; Sheinkman, M. K. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1180 

    Examines the symmetry of YB³+;-related luminescent centers in indium phosphide and In[sub1-x]Ga[subx]P layers with alloy composition using polarized excitation spectroscopy. Preparation of the samples; Photoluminescence spectra of Yb-doped epitaxial layers.

  • Photoemission study of size selected InP nanocrystals: the relationship between luminescence yield and surface structure. Adam, S.; McGinley, C.; Möller, T.; Talapin, D. V.; Borchert, H.; Haase, M.; Weller, H. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Jun2003, Vol. 24 Issue 1-3, p373 

    The surfaces of luminescent InP nanocrystals were investigated by photoelectron spectroscopy (PES) technique with synchrotron radiation. Semiconductor samples were prepared by an organometallic approach using trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO) as stabilizing and size...

  • Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties. Ossicini, S.; Degoli, E.; Iori, F.; Luppi, E.; Magri, R.; Cantele, G.; Trani, F.; Ninno, D. // Applied Physics Letters;10/24/2005, Vol. 87 Issue 17, p173120 

    The effects of B and P codoping on the impurity formation energies and electronic properties of Si nanocrystals (Si-nc) are calculated by a first-principles method. We show that, if carriers in the Si-nc are perfectly compensated by simultaneous doping with n- and p-type impurities, the Si-nc...

  • Dynamical study of the radiative recombination processes in GaN/AlGaN QWs. Sabooni, Mahmood; Esmaeili, Morteza; Haratizadeh, Hamid; Monemar, Bo; Amano, Hiroshi // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p316 

    The effects of the Si doping level on the recombination dynamics and carrier (exciton) localization in modulation-doped GaN/Al0.07Ga0.93N multiple-quantum-well (MQW) structures were studied by means of photoluminescence (PL) and time-resolved PL measurements. All samples with different doping...

  • Low temperature synthesis and photoluminescence of Ca(VO):Eu nanocrystals with Li addition. Xiaochun Zhou; Xiaojun Wang; Renyun Kuang; Jin Guo; Hongmei Chen // Inorganic Materials;Nov2010, Vol. 46 Issue 11, p1244 

    Different crystalline Ca(VO) nanocrystals have been synthesized successfully via a facile low temperature method with lithium addition. After different ration of Li doping into the Ca(VO): Eu host, the crystallinity of the sample becomes different, resulting in different of luminescence...

  • Active planar optical waveguides with silicon nanocrystals: Leaky modes under different ambient conditions. Luterová, K.; Skopalová, E.; Pelant, I.; Rejman, M.; Ostatnický, T.; Valenta, J. // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p074307 

    We study both experimentally and theoretically the propagation of light emitted from silicon nanocrystals forming planar waveguides buried in SiO2. Photoluminescence spectra detected from the sample facet show significant spectral narrowing—leaky modes—with respect to the spectra...

  • Visible photoluminescence of co-sputtered Ge—Si duplex nanocrystals. Xu, Z. W.; Ngan, A. .W.; Hua, W. Y.; Meng, X. K. // Applied Physics A: Materials Science & Processing;Aug2005, Vol. 81 Issue 3, p459 

    The photoluminescence (PL) characteristics of co-sputtered Ge–Si duplex nanocrystal films were examined under excitation by a 325-nm HeCd laser, combined with Raman and Fourier-transform infrared reflection spectra analysis. A broad visible PL spectrum from the as-deposited Ge–Si...

  • Single-photon generation from a nitrogen impurity center in GaAs. Ikezawa, Michio; Sakuma, Yoshiki; Zhang, Liao; Sone, Yosinori; Mori, Tatsuya; Hamano, Takenobu; Watanabe, Masato; Sakoda, Kazuaki; Masumoto, Yasuaki // Applied Physics Letters;1/23/2012, Vol. 100 Issue 4, p042106 

    We have demonstrated single-photon emission from a nitrogen luminescence center in GaAs. An inhomogeneously broadened luminescence band formed by localized centers was observed in the spectral range from 1480 meV to 1510 meV at 5 K in nitrogen delta-doped GaAs. Optical properties of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics