TITLE

Photoluminescence enhancement of Si nanocrystals embedded in SiO2 matrix by CeF3 doping

AUTHOR(S)
Fang, Y. C.; Zhang, Z. J.; Xie, Z. Q.; Zhao, Y. Y.; Lu, M.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191919
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ce3+ ions were doped into Si nanocrystals (nc-Si) embedded in SiO2 matrix (nc-Si/SiO2) by evaporation of CeF3 powder onto the surface of nc-Si/SiO2 and followed by thermal annealing in nitrogen ambient at different temperatures. Photoluminescence (PL) properties of the doped samples were studied. It has been found that the PL intensity of nc-Si can be remarkably enhanced and the enhancement depends on the doping concentration. Photoluminescence excitation spectra of the doped and undoped nc-Si imply that the enhancement comes from energy transfer from Ce3+ ions to nc-Si when excitation wavelength ranges from 240 to 320 nm.
ACCESSION #
17164750

 

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