Fermi-level band filling and band-gap renormalization in Ga-doped ZnO

Ye, J. D.; Gu, S. L.; Zhu, S. M.; Liu, S. M.; Zheng, Y. D.; Zhang, R.; Shi, Y.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192111
Academic Journal
The fundamental optical properties of Ga-doped ZnO films grown by metalorganic chemical vapor deposition were investigated by room-temperature transmittance and photoluminescence (PL) spectroscopy. The Burstein–Moss (BM) shift of the absorption edge energy is observed at the carrier concentration up to 2.47×1019 cm-3. The absorption edges are fitted to a comprehensive model based on the electronic energy-band structure near critical points plus relevant discrete and continuum excitonic effects, taking account of the Fermi-level filling factor. The theoretical calculation for BM effect is in good agreement with the experimental facts, considering the nonparabolic nature of conduction-band and band-gap renormalization (BGR) effects. Meanwhile, the monotonic redshift of the near-band-gap emission detected by PL measurements has also been observed with increasing free-carrier concentration, which is attributed to the BGR effects, and can be fitted by an n1/3 power law with a BGR coefficient of 1.3×10-5 meV cm.


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