TITLE

Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

AUTHOR(S)
Nuntawong, N.; Xin, Y. C.; Birudavolu, S.; Wong, P. S.; Huang, S.; Hains, C. P.; Huffaker, D. L.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p193115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate an InAs/GaAs quantum dot (QD) laser based on a strain-compensated, three-stack active region. Each layer of the stacked QD active region contains a thin GaP (Δao=-3.8%) tensile layer embedded in a GaAs matrix to partially compensate the compressive strain of the InAs (Δao=7%) QD layer. The optimized GaP thickness is ∼4 MLs and results in a 36% reduction of compressive strain in our device structure. Atomic force microscope images, room-temperature photoluminescence, and x-ray diffraction confirm that strain compensation improves both structural and optical device properties. Room-temperature ground state lasing at λ=1.249 μm, Jth=550 A/cm2 has been demonstrated.
ACCESSION #
17164740

 

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