Effects of annealing and temperature on acoustic dissipation in a micromechanical silicon oscillator

Hans Haucke; Xiao Liu; Vignola, J. F.; Houston, B. H.; Marcus, M. H.; Baldwin, J. W.
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p181903
Academic Journal
The temperature dependence (15–320 K) of the acoustic dissipation was studied for some lower vibrational modes of a suspended silicon plate 1.5 μm thick. Our oscillator was exposed to the laboratory environment prior to measurement, laser annealed while in a cryogenic vacuum, and remeasured. We find a dissipation peak at 160 K, similar to results by others, and a second dissipation peak near 30 K. Annealing reduced the dissipation at 160 K by as much as a factor of 10, and gave quality factors as high as 1.4×106 at 470 kHz and our lowest temperature. Our data support the idea that the 160 K peak is related to adsorbates, and show this mechanism is important at room temperature. Post-anneal room-temperature dissipation appears to be limited by thermoelastic loss for certain modes.


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