Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Po-Tsun Liu; Tsai, T. M.; Chang, T. C.
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p182903
Academic Journal
This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150 °C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.


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