Resonant-tunneling electron emitter in an AlN/GaN system

Ishida, A.; Inoue, Y.; Fujiyasu, H.
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p183102
Academic Journal
An AlN/GaN multiple-barrier resonant-tunneling electron emitter is proposed in this letter, utilizing polarization fields in the AlN/GaN heterostructure. The resonant-tunneling voltage is extremely high, compared with usual resonant-tunneling devices, due to the polarization field in the heterostructure, and this high resonant voltage enables practical use of the devices. Selective and high-density electron emission is to be expected through the resonant-tunneling layer and GaN surface accelerating layer.


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