Microwave dielectric relaxation of the polycrystalline (Ba,Sr)TiO3 thin films

Taeho Moon; Byungjoo Lee; Tae-Gon Kim; Jeongmin Oh; Young Woo Noh; Sangwook Nam; Byungwoo Park
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p182904
Academic Journal
The microwave dielectric properties of the (Ba,Sr)TiO3 thin films annealed at various oxygen pressures ranging from 5 to 500 mTorr were investigated over the frequency range 0.5–5 GHz using a circular-patch capacitor geometry. The dielectric constant ([variant_greek_epsilon]) followed Curie–von Schweidler relaxation in the microwave-frequency range, and the degree of relaxation corresponded qualitatively with the measured dielectric loss (tan δ). As the oxygen pressure varied, the dielectric loss had a maximum value of ∼0.03 at 100 mTorr, and its behavior was correlated with the Raman strength of the polar modes.


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