Carrier-density-dependent electron effective mass in Zn1-xMnxSe for 0≤x≤0.13

Agarwal, K. C.; Daniel, B.; Grün, M.; Feinäugle, P.; Klingshirn, C.; Hetterich, M.
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p181907
Academic Journal
We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1-xMnxSe epilayers (0≤x≤0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical electron effective mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1-xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133 m0 to 0.152 m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095 m0 to 0.115 m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge electron masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132 m0 and 0.093 m0, respectively.


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