Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots

Marcinkevičius, Saulius; Yueming Qiu; Leon, Rosa; Ibáñez, Jordi; Cuscó, Ramon; Artús, Lluís
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p181110
Academic Journal
InAsSb quantum dots (QDs) grown by metalorganic vapor phase epitaxy on In0.53Ga0.47As/InP under different TMSb/AsH3 flow ratios have been characterized by means of continuous wave and time-resolved photoluminescence (PL) as well as Raman scattering. It was found that the flow ratio has a very strong influence on the QD composition, PL peak energies, and carrier recombination times. While the samples prepared using low TMSb/AsH3 flow ratios show a bimodal character with both InAs and InAsSb QDs present, in the structures grown at high flow ratios the InAsSb QDs dominate, showing strong photoluminescence intensity, fast carrier capture and slow recombination.


Related Articles

  • Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy. Huffaker, D. L.; Hains, C. P.; Nuntawong, N.; Xin, Y. C.; Wong, P. S.; Xue, L.; Brueck, S. R. J.; Lester, L. // Journal of Applied Physics;2/1/2006, Vol. 99 Issue 3, p033503 

    We analyze temperature-dependent photoluminescence (PL) behavior of patterned InAs/GaAs quantum dots (PQDs) formed by selective area epitaxy using metalorganic chemical vapor deposition. The processing scheme, described here, yields an ensemble of electronically isolated PQDs with PL...

  • Self-assembled InAsSb quantum dots on (001) InP substrates. Yueming Qiu; Uhl, David // Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1510 

    Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with...

  • Optical properties of GaN quantum dots. Ramvall, Peter; Riblet, Philippe // Journal of Applied Physics;4/15/2000, Vol. 87 Issue 8, p3883 

    Provides information on a study which investigated the optical properties of GaN quantum dots grown by means of metalorganic vapor phase epitaxy. Growth procedure; Optical characterization; Conclusions.

  • Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots. Howe, P.; Ru, E. C. Le; Clarke, E.; Abbey, B.; Murray, R.; Jones, T. S. // Journal of Applied Physics;3/15/2004, Vol. 95 Issue 6, p2998 

    Atomic force microscopy and photoluminescence spectroscopy (PL) have been used to study asymmetric bilayer InAs quantum dot (QD) structures grown by molecular-beam epitaxy on GaAs(001) substrates. The two QD layers were separated by a GaAs spacer layer (SL) of varying thickness and were grown at...

  • Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy. Singha, R. K.; Manna, S.; Das, S.; Dhar, A.; Ray, S. K. // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233113 

    We report on the observation of intraband near infrared (∼3.1 μm) and mid infrared (∼6.2 μm) photocurrent response at room temperature using Ge/Si self-assembled quantum dots grown by molecular beam epitaxy. Due to the bimodal size distribution and SiGe intermixing,...

  • InAs/InP quantum dots with bimodal size distribution: Two evolution pathways. Bansal, Bhavtosh; Gokhale, M. R.; Bhattacharya, Arnab; Arora, B. M. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p094303 

    The evolution of InAs quantum dots grown on InP substrates by metal-organic vapor phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition proceeds via two distinct pathways: through (i) an abrupt appearance...

  • Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates. Mazur, Yu. I.; Abu Waar, Z. Y.; Mishima, T. D.; Lee, J. H.; Tarasov, G. G.; Liang, B. L.; Dorogan, V. G.; Ware, M. E.; Wang, Zh. M.; Johnson, M. B.; Salamo, G. J. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p044310 

    Spectroscopic study of the InAs quantum dot (QD) formation in GaAs ringlike nanostructures is carried out. Ga droplet epitaxy is used to form GaAs ringlike nanostructures. Subsequently InAs is deposited to obtain InAs QDs by self-assembly inside the holes of the nanostructures. Regularly spaced...

  • Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy. Itani, Y.; Asahi, H.; Kaneko, T.; Okuno, Y.; Gonda, S. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1161 

    Focuses on a study which investigated the metalorganic molecular beam epitaxy growth characteristics of antimony containing ternary alloys, InGaSb and GaAsSb. Background to the study; Experimental procedure; Results and discussion.

  • Time-resolved and time-integrated photoluminescence in ZnO epilayers grown on Al[sub 2]O[sub 3](0001) by metalorganic vapor phase epitaxy. Jung, S. W.; Park, W. I.; Cheong, H. D.; Yi, Gyu-Chul; Jang, Hyun M.; Hong, S.; Joo, T. // Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1924 

    We report on photoluminescence (PL) spectra of ZnO films grown by low pressure metalorganic vapor phase epitaxy. For PL measurements, high quality ZnO thin films were epitaxially grown on A1[sub 2]O[sub 3](0001) substrates. Time-integrated PL spectra of the films at 10 K clearly exhibited free A...


Read the Article

Courtesy of your local library

Public Libraries Near You (See All)
Looking for a Different Library?

Other Topics