TITLE

Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots

AUTHOR(S)
Marcinkevičius, Saulius; Yueming Qiu; Leon, Rosa; Ibáñez, Jordi; Cuscó, Ramon; Artús, Lluís
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p181110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAsSb quantum dots (QDs) grown by metalorganic vapor phase epitaxy on In0.53Ga0.47As/InP under different TMSb/AsH3 flow ratios have been characterized by means of continuous wave and time-resolved photoluminescence (PL) as well as Raman scattering. It was found that the flow ratio has a very strong influence on the QD composition, PL peak energies, and carrier recombination times. While the samples prepared using low TMSb/AsH3 flow ratios show a bimodal character with both InAs and InAsSb QDs present, in the structures grown at high flow ratios the InAsSb QDs dominate, showing strong photoluminescence intensity, fast carrier capture and slow recombination.
ACCESSION #
17164694

 

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