Toward the formation of three-dimensional nanostructures by electrochemical etching of silicon

Kleimann, P.; Badel, X.; Linnros, J.
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p183108
Academic Journal
We report a simple technique to form various kinds of three-dimensional structures in silicon. The process flow is only composed of two steps: lithography and electrochemical etching (“LEE”). The LEE process is an easy and low-cost solution for the fabrication of high-aspect-ratio structures such as walls, tubes, and pillars. Here we demonstrate the possibility to apply the LEE process on the submicrometer scale, indicating that it is a promising tool for silicon nanomachining.


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