Study of extended-defect formation in Ge and Si after H ion implantation

Akatsu, T.; Bourdelle, K. K.; Richtarch, C.; Faure, B.; Letertre, F.
May 2005
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p181910
Academic Journal
Extended defects formed after hydrogen implantation into Si and Ge (100) substrates and subsequent thermal anneals were investigated by transmission electron microscopy. The majority of the extended defects formed in both materials were platelet-like structures lying on {100} and {111} planes. We found {100} platelets not only parallel but also perpendicular to the surface. In Ge wafers, high density of {311} defects and nanobubbles with the average size of 2 nm were observed. The difference between two materials can be attributed to the weaker strength of Ge–H bond.


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