TITLE

Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

AUTHOR(S)
Han-Ki Kim; Kim, D.-G.; Lee, K.-S.; Huh, M.-S.; Jeong, S. H.; Kim, K. I.; Tae-Yeon Seong
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p183503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2×10-5 mA/cm2) at reverse bias of -6 V as compared to that (1×10-1–10-2 mA/cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.
ACCESSION #
17164675

 

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