TITLE

Enhanced annealing effect in an oxygen atmosphere on Ga1-xMnxAs

AUTHOR(S)
Malfait, M.; Vanacken, J.; Moshchalkov, V. V.; Van Roy, W.; Borghs, G.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p132501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on in situ resistivity measurements on Ga1-xMnxAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the Ga1-xMnxAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (MnI) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of Ga1-xMnxAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the outdiffusion of MnI. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.
ACCESSION #
16702361

 

Related Articles

  • Influence of Annealing Temperature on the Photo-Electrical and Structural Disorder Characteristics of Nano-Structured Zinc Oxide Thin Films. Mamat, M. H.; Sahdan, M. Z.; Amizam, S.; Rafaie, H. A.; Khusaimi, Z.; Rusop, M. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p601 

    This paper studies the photoelectrical and structural disorder characteristic of zinc oxide thin films on glass substrates at different annealing temperatures. The ZnO thin films were prepared through cost effective sol-gel method and spin-coating technique from zinc acetate in alcoholic...

  • Electrical characterization of band gap states in C-doped TiO2 films. Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori // Applied Physics Letters;8/1/2005, Vol. 87 Issue 5, p052111 

    We report on band gap states in C-doped TiO2 films that were prepared by oxidative annealing of sputtered TiC films at 550 °C in flowing O2 gas. Deep-level optical spectroscopy measurements revealed three deep levels located at ∼0.86, ∼1.30, and ∼2.34 eV below the conduction...

  • Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. Ding, L.; Chen, T. P.; Liu, Y.; Ng, C. Y.; Liu, Y. C.; Fung, S. // Applied Physics Letters;9/19/2005, Vol. 87 Issue 12, p121903 

    The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been...

  • Optical, structural and electrical properties of Mn doped tin oxide thin films. Brahma, Rajeeb; Krishna, M. Ghanashyam; Bhatnagar, A. K. // Bulletin of Materials Science;2006, Vol. 29 Issue 3, p317 

    Mn doped SnOx thin films have been fabricated by extended annealing of Mn/SnO2 bilayers at 200°C in air for 110 h. The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with dopant concentration between 0 and 30 wt%...

  • Annealing techniques for optimizing 45nm-node USjs. Borland, John; Mineji, Akira; Krull, Wade; Taniyo, Masayasu; Hillard, Robert; Walker, Tom // Solid State Technology;May2006, Vol. 49 Issue 5, p47 

    The article reports that several p+ extension implantation dopant species and annealing methods have been examined in order to attain high dopant activation and low damage ultra-shallow junctions which are 15-20nm deep for 45nm-node applications. It was observed that the use of molecular dopant...

  • Controlling preferred orientation of ZnO thin films by atomic layer deposition. Sang-Hee Ko Park; Yong Eui Lee // Journal of Materials Science;Mar2004, Vol. 39 Issue 6, p2195 

    Discusses the controlling preferred orientation of zinc oxide (ZnO) thin films by atomic layer deposition (ALD). Growth of ZnO films carried out in a prototype F-450; Effect of oxygen gas on the film growth; Finding that oxygen gas strongly influences the growth mode of ZnO film in the ALD method.

  • Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor. Migliorato, Piero; Delwar Hossain Chowdhury, Md; Gwang Um, Jae; Seok, Manju; Jang, Jin // Applied Physics Letters;9/17/2012, Vol. 101 Issue 12, p123502 

    The analysis of current-voltage (I-V) and capacitance-voltage (C-V) characteristics for amorphous indium gallium zinc oxide Thin film transistors as a function of active layer thickness shows that negative bias under illumination stress (NBIS) is quantitatively explained by creation of a bulk...

  • Kinetics of resistive response of SnO2 − x thin films in gas environment. Ryabtsev, S.; Yukish, A.; Khango, S.; Yurakov, Yu.; Shaposhnik, A.; Domashevskaya, É. // Semiconductors;Apr2008, Vol. 42 Issue 4, p481 

    Data on the gas sensitivity of SnO2 − x thin films in oxygen and hydrogen environment are obtained. The films were fabricated by oxidizing metallic tin layers in air at various temperatures. The nonmonotonic kinetics of the resistive response of SnO2 − x samples under...

  • Electric-pulse-induced resistance change in Ba0.5Sr0.5Co0.2Fe0.8O3 thin films. Xing, Z. W.; Wu, N. J.; Ignatiev, A. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023706 

    Five-component perovskite Ba0.5Sr0.5Co0.2Fe0.8O3 (BSCFO) thin films are reported to have polarized electrical-pulse-induced resistance (EPIR) change at room temperature. Such an EPIR change is attributed to a combined effect of the resistance change in the Schottky barrier and the oxygen...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics