Enhanced annealing effect in an oxygen atmosphere on Ga1-xMnxAs

Malfait, M.; Vanacken, J.; Moshchalkov, V. V.; Van Roy, W.; Borghs, G.
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p132501
Academic Journal
We report on in situ resistivity measurements on Ga1-xMnxAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the Ga1-xMnxAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (MnI) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of Ga1-xMnxAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the outdiffusion of MnI. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.


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