TITLE

Miniaturized single-crystal silicon cantilevers for scanning force microscopy

AUTHOR(S)
Yang, J. L.; Despont, M.; Drechsler, U.; Hoogenboom, B. W.; Frederix, P. L. T. M.; Martin, S.; Engel, A.; Vettiger, P.; Hug, H. J.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p134101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a method to reproducibly batch fabricate single-crystal silicon cantilevers with dimensions an order of magnitude smaller than conventional cantilevers, i.e., with lengths between 10 and 35 µm, a width of 4 µm, and a thickness of 0.2 µm. The cantilevers are attached to support chips specially tailored for use in a scanning force microscope. The resonance frequencies are 0.2 - 2 MHz, the spring constants about 0.05-1 N/m, and the quality factors 1.5-3.0 × 104. The resulting thermal force noise is 1 -2 × 10-16 N/√Hz at noon temperature in vacuum. These cantilevers allow an enhancement ot the measurement speed of more than one order of magnitude, and 2-5× better force sensitivity. After annealing in ultrahigh vacuum and measuring at liquid helium temperature the thermal force noise of these cantilevers is expected to he further reduced down to 1018 N/√Hz.
ACCESSION #
16702357

 

Related Articles

  • Scanned electrostatic force microscope for noninvasive high frequency potential measurement. Said, Ra'a A.; Bridges, Greg E.; Thomson, Doug J. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1442 

    Presents a technique for performing localized noncontact measurements of high frequency signals on integrated circuits using scanned force microscope. Extraction of the signal voltage amplitude and phase at a circuit point; Approach used in measuring high frequency signals; Performance of...

  • A scanning force microscope with atomic resolution in ultrahigh vacuum and at low temperatures Allers, W.; Schwarz, A.; Schwarz, U.D.; Schwarz, U. D.; Wiesendanger, R. // Review of Scientific Instruments;Jan1998, Vol. 69 Issue 1, p221 

    Designs a scanning force microscope for operation at low temperature in an ultrahigh vacuum system. Utilization of fiber interferometer detection mechanism; Implication for atomic scale imaging with in situ cantilever and sample exchange; Transfer mechanism of microscope into cryostat.

  • Multifunctional probe microscope for facile operation in ultrahigh vacuum. Howald, L.; Meyer, E. // Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p117 

    Describes the scanning force/tunneling microscope for remote controlled operation in ultrahigh vacuum. Suspension of probe microscope by four rings; Use of laser diodes as light sources; Selection of three scans in different operating modes.

  • Identification of intrinsic gettering centers in oxygen-free silicon crystals. Ueda, O.; Nauka, K.; Lagowski, J.; Gatos, H. C. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p622 

    Presents information on a study which identified intrinsic gettering centers in oxygen-free silicon crystals after a high-low-medium-temperature annealing cycle using transmission electron microscopy and energy dispersive x-ray spectroscopy. Description of a three-step annealing cycle commonly...

  • New intrinsic gettering process in silicon based on interactions of silicon interstitials. Nauka, K.; Lagowski, J.; Gatos, H. C.; Ueda, O. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p615 

    Presents information on a study which proposed experimental data on an intrinsic gettering process found in silicon crystals subjected to a three-step annealing sequence. Characteristics of the intrinsic gettering process; Methodology of the study; Results and discussion.

  • Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon. Miyao, M.; Polman, A.; Sinke, W.; Saris, F. W.; van Kemp, R. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1132 

    High-energy (0.2–0.8 MeV, ≊1017 cm-2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and...

  • Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal. Hatakeyama, H.; Suezawa, M. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p4945 

    Studies the process of generation and some properties of shallow donors generated by annealing a hydrogen-doped Czochralski-grown silicon crystal after electron irradiation. Generation and annihilation of three kinds of shallow donors D1-D3; Estimation of the energy barrier;...

  • Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion). Neımash, V. B.; Puzenko, E. A.; Kabaldin, A. N.; Kraıchinskiı, A. N.; Kras’ko, N. N. // Semiconductors;Dec99, Vol. 33 Issue 12, p1279 

    The influence of preliminary heat treatment at 800 °C on the accumulation and annealing kinetics of thermal donors formed at 450 °C in silicon single crystals is investigated by performing four-point measurements of the electrical resistivity. The activation energies for the generation and...

  • Laser annealing of silicon. Poate, John M.; Brown, Walter L. // Physics Today;Jun82, Vol. 35 Issue 6, p24 

    Focuses on the technology of laser annealing of silicon. Information on how to make integrated circuits; Effect of pulsed or continuous-wave laser radiation on ion-implantation damage in semiconductors; Features and applications of silicon crystal growth and solidification revealed through...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics