Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

June-O Song; Woong-Ki Hong; Park, Y.; Kwak, J. S.; Tae-Yeon Seong
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133503
Academic Journal
We report on the formation of high-quality p-type Al-based ohmic reflectors using Ag (3 nm)/indium tin oxide (ITO)(100 nm) interlayers for use in high-power flip-chip light-emitting diodes (LEDs). The Ag/ITO interlayers are first annealed at temperatures of 530 and 630 °C for 1 min in air, after which Al reflectors (200 nm thick) are deposited and subsequently annealed at 330 °C for 5 min in a vacuum. It is shown that the annealed Ag/ITO/Al contacts give specific contact resistances as low as ∼10-5 Ω cm-2 and reflectance of ∼85% at a wavelength of 460 nm, which are much better than those of oxidized Ni/Au schemes. LEDs fabricated with the annealed Ag/ITO/Al p-type electrodes give forward-bias voltages of 3.29–3.37 V at injection current of 20 mA.


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