TITLE

Nanoscale effects on ion conductance of layer-by-layer structures of gadolinia-doped ceria and zirconia

AUTHOR(S)
Azad, S.; Marina, O. A.; Wang, C. M.; Saraf, L.; Shutthanandan, V.; McCready, D. E.; El-Azab, A.; Jaffe, J. E.; Engelhard, M. H.; Peden, C. H. F.; Thevuthasan, S.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Layer-by-layer structures of gadolinia-doped ceria and zirconia have been synthesized on Al2O3(0001) using oxygen plasma-assisted molecular beam epitaxy. Oxygen ion conductivity greatly increased with an increasing number of layers compared to bulk polycrystalline yttria-stabilized zirconia and gadolinia-doped ceria electrolytes. The conductivity enhancement in this layered electrolyte is interesting, yet the exact cause for the enhancement remains unknown. For example, the space charge effects that are responsible for analogous conductivity increases in undoped layered halides are suppressed by the much shorter Debye screening length in layered oxides. Therefore, it appears that a combination of lattice strain and extended defects due to lattice mismatch between the heterogeneous structures may contribute to the enhancement of oxygen ionic conductivity in this layered oxide system.
ACCESSION #
16702349

 

Related Articles

  • Growth-rate induced epitaxial orientation of CeO2 on Al2O3(0001). Kuchibhatla, Satyanarayana V. N. T.; Nachimuthu, P.; Gao, F.; Jiang, W.; Shutthanandan, V.; Engelhard, M. H.; Seal, S.; Thevuthasan, S. // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p204101 

    High-quality CeO2 films were grown on Al2O3(0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the films is found to be CeO2(100) and CeO2(111) at low (<8 Ã…/min) and higher growth rates (>12 Ã…/min), respectively. CeO2(100) film grows as...

  • Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy. Jmerik, V.; Mizerov, A.; Shubina, T.; Plotnikov, D.; Zamoryanskaya, M.; Yagovkina, M.; Domracheva, Ya.; Sitnikova, A.; Ivanov, S. // Semiconductors;May2008, Vol. 42 Issue 5, p616 

    The processes leading to the formation of a spatially nonuniform distribution of indium in the In x Ga1 - x N layers with x = 0-0.6 grown by molecular beam epitaxy with plasma activation of nitrogen at relatively low growth temperatures (590�630�C) are studied. It is found that at low...

  • Theoretical and experimental operating wavelength of GaAs/Al0.25Ga0.75As IR photodetectors. A. Almaggoussi; A. Abounadi; H. Akabli; K. Zekentes; M. Androulaki // European Physical Journal - Applied Physics;Feb2009, Vol. 45 Issue 2, p20301 

    IR photodetectors based on GaAs/Al0.25Ga0.75As multiquantum wells (QWIP) grown by molecular beam epitaxy (MBE) are studied. The envelop function formalism is used to determine the theoretical intersubband transition energies. The electronic states are calculated in both parabolic and non...

  • Formation of acceptor centers under the action of redox media on the surface of Cd xHg1 - xTe films. Varavin, V.; Sidorov, G. // Semiconductors;Dec2009, Vol. 43 Issue 13, p1641 

    The effect of redox media on the formation of acceptor centers in the Cd xHg1 - xTe films grown by molecular beam epitaxy on the GaAs (301) substrates is studied. When tested for long-term stability, the untreated n-type films do not change their parameters, whereas the treated films exhibit a...

  • Development of Molecular Beam Epitaxially Grown Hg1-xCdxTe for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays. Aqariden, F.; Dreiske, P. D.; Kinch, M. A.; Liao, P. K.; Murphy, T.; Schaake, H. F.; Shafer, T. A.; Shih, H. D.; Teherani, T. H. // Journal of Electronic Materials;Aug2007, Vol. 36 Issue 8, p900 

    Hg1-xCdxTe samples of x ~ 0.3 (in the midwave infrared, or MWIR, spectral band) were prepared by molecular beam epitaxy (MBE) for fabrication into 30-µm-pitch, 256 x 256, front-side-illuminated, high-density vertically-integrated photodiode (HDVIP) focal plane arrays (FPAs). These MBE...

  • Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films. Kulikov, D. V.; Trushin, Yu. V.; Kharlamov, V. S. // Technical Physics Letters;Mar2010, Vol. 36 Issue 3, p262 

    The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic equations. The dependence of the GaN film growth rate on the ion energy is determined and...

  • Temperature profile along a nanowhisker growing in high vacuum. Sibirev, N.; Soshnikov, I.; Dubrovskii, V.; Arshansky, E. // Technical Physics Letters;Apr2006, Vol. 32 Issue 4, p292 

    A theoretical model describing the temperature profile along a nanowhisker (NW) growing in high vacuum is proposed. Under such conditions, the growing crystal is cooled due to thermal radiation from the surface. Knowledge of the temperature field is necessary for simulation of the NW growth...

  • Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy. Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadookh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Vasiliev, V. V. // Semiconductors;Nov2008, Vol. 42 Issue 11, p1298 

    The effect of near-surface graded-gap layers on the electrical characteristics of MIS structures fabricated based on heteroepitaxial Hg1 − x Cd x Te films grown by molecular beam epitaxy with a two-layer SiO2/Si3N4 insulator and anodic oxide film is studied experimentally. It is shown...

  • Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy. Cherns, D.; Meshi, L.; Griffiths, I.; Khongphetsak, S.; Novikov, S. V.; Farley, N. R. S.; Campion, R. P.; Foxon, C. T. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111911 

    Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on {1010} planes and bounded by opposite partial screw...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics