Mechanism for spatial organization in quantum dot self-assembly

Da Gao; Kaczynski, Adam; Jaszczak, John A.
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133102
Academic Journal
Inspired by experimental observations of spatially ordered growth hillocks on the (001) surfaces of natural graphite crystals, a mechanism for spatial organization in quantum dot self-assembly is proposed. The regular arrangement of steps from a screw dislocation-generated growth spiral provides the overall template for such ordering. An ordered array of quantum dots may be formed or nucleated from impurities driven to the step corners by diffusion and by their interactions with the spiral’s steps and kinks. Kinetic Monte Carlo simulation of a solid-on-solid model supports the feasibility of such a mechanism.


Related Articles

  • Lateral quantum-dot replication in three-dimensional quantum-dot crystals. Kiravittaya, S.; Heidemeyer, H.; Schmidt, O. G. // Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263113 

    Single quantum dots (QDs) reproduce into pairs of QDs with increasing separation distance during the growth of a three-dimensional QD crystal. Kinetic Monte Carlo simulations—that rely on strain profiles deduced from experiment—can describe this lateral replication process, which...

  • Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate. Fu, K.; Fu, Y. // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p181913 

    The growth dynamics of self-assembled GaSb quantum dots (QDs) on GaAs substrate was investigated using kinetic Monte Carlo method. The strain induced by the lattice mismatch between the epitaxial material and the substrate was shown to be directly responsible for the three-dimensional QD...

  • Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing. Baskaran, Arvind; Devita, Jason; Smereka, Peter // Continuum Mechanics & Thermodynamics;Jan2010, Vol. 22 Issue 1, p1 

    An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are incorporated using a ball and spring model. While idealized, this...

  • Liquid-Solid Transition in Nuclei of Protein Crystals. Lomakin, Aleksey; Asherie, Neer; Benedek, George B. // AIP Conference Proceedings;2003, Vol. 690 Issue 1, p390 

    The difficulty in forming high quality protein crystals stems in part from the short-range and anisotropic character of protein interactions. Proteins are typically crystallized from dilute but highly supersaturated solutions; the energies of interaction are large, and aggregates and a...

  • Study of porous glass doped with quantum dots or laser dyes under alpha irradiation. Létant, S. E.; Wang, T.-F. // Applied Physics Letters;3/6/2006, Vol. 88 Issue 10, p103110 

    We demonstrate that nanocomposite materials based on semiconductor quantum dots have potential for radiation detection via scintillation. While quantum dots and laser dyes both emit in the visible range at room temperature, the Stokes shift of the dyes is significantly larger. The scintillation...

  • Full configuration interaction approach to the few-electron problem in artificial atoms. Rontani, Massimo; Cavazzoni, Carlo; Bellucci, Devis; Goldoni, Guido // Journal of Chemical Physics;3/28/2006, Vol. 124 Issue 12, p124102 

    We present a new high performance configuration interaction code optimally designed for the calculation of the lowest-energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a...

  • Quantum-dot growth simulation on periodic stress of substrate. Chang Zhao; Chen, Y. H.; Cui, C. X.; Xu, B.; Sun, J.; Lei, W.; Lu, L. K.; Wang, Z. G. // Journal of Chemical Physics;9/1/2005, Vol. 123 Issue 9, p094708 

    InAs quantum dots (QDs) are grown on the cleaved edge of an InxGa1-xAs/GaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an InxGa1-xAs layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically...

  • Radiative emission from multiphoton-excited semiconductor quantum dots. Han, T.-T.; Fu, Y.; Ågren, H. // Journal of Applied Physics;3/15/2007, Vol. 101 Issue 6, p063712 

    Optical transitions in CdS semiconductor quantum dots (QDs) have been studied by the Monte Carlo method based on probability calculations of the time-dependent Schrödinger equation. It has been demonstrated that excited by a continuous-wave laser, an assembly of CdS QDs, whose radii range...

  • Spatial ordering of stacked quantum dots. Lee, C.-S.; Kahng, B.; Barabási, A.-L. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p984 

    We investigate the growth conditions necessary to form an ordered quantum dot crystal by capping spatially ordered quantum dots and growing a new layer of dots on top of the capping layer. Performing Monte Carlo simulations and developing analytic arguments based on the stress energy function,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics