Cation intermixing at quantum well/barriers interfaces in aged AlGaAs-based high-power laser diodes bars

Pommiès, M.; Avella, M.; Cánovas, E.; Jiménez, J.; Fillardet, T.; Oudart, M.; Nagle, J.
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131103
Academic Journal
We report an analysis of quantum well (QW) degradation in high-power AlGaAs-based laser bars emitting at 808 nm. Using low-temperature spectrally resolved cathodoluminescence (LT-SRCL) we evidenced a redshift of the AlGaAs QW luminescence peak in the less degraded regions and a blueshift in the heavily degraded parts. This blueshift is interpreted as an experimental evidence of cation intermixing between the QW and the barriers. A degradation scenario is proposed where locally higher defects concentration at QW interfaces triggers QW degradation assisted by recombination enhanced defect reactions (REDR) leading to cation intermixing as a final product of the degradation.


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