Ternary rare-earth metal oxide high-k layers on silicon oxide

Zhao, C.; Witters, T.; Brijs, B.; Bender, H.; Richard, O.; Caymax, M.; Heeg, T.; Schubert, J.; Afanas'ev, V. V.; Stesmans, A.; Schlom, D. G.
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p132903
Academic Journal
Ternary oxides, GdScO3, DyScO3, and LaScO3, deposited by pulsed laser deposition using ceramics targets of stoichiometric composition, were studied as alternative high-k gate dielectrics on (100) Si. Their physical characterization was done using Rutherford backscattering, spectroscopic ellipsometry, x-ray diffraction, and transmission electron microscopy on blanket layers deposited on (100) Si, and electrical characterization on capacitors. It is found that DyScO3 and GdScO3 preserve their amorphous phases up to 1000 °C. Other encouraging properties for high k applications were demonstrated, including k-value ∼22, almost no hysteresis or frequency dispersion in C–V curves, and leakage current reduction comparable to that of HfO2 of the same equivalent oxide thickness.


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