TITLE

GaInAs/AlAsSb quantum-cascade lasers operating up to 400 K

AUTHOR(S)
Yang, Q.; Manz, C.; Bronner, W.; Mann, Ch.; Kirste, L.; Köhler, K.; Wagner, J.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Above room-temperature (T>=400 K) operation of GaInAs/AlAsSb-based quantum-cascade lasers has been demonstrated. The lasers are based on vertical-transition active regions and consist of 25 periods of Ga0.47In0.53As/AlAs0.56Sb0.44 active/injection regions grown lattice-matched on InP substrates by molecular-beam epitaxy. They emit at a wavelength of λ∼4.5 μm. For a device with the size of 18 μm×2.8 mm mounted substrate-side down with as-cleaved facets, a maximum peak power per facet of 750 mW has been achieved at 300 K and remains as high as 30 mW at 400 K. The characteristic temperature T0 of the threshold current density is 171 K in the temperature range between 280 K and 400 K.
ACCESSION #
16702319

 

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