TITLE

Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy

AUTHOR(S)
Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Georgakilas, A.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A consistent physical model of the growth of InN on GaN (0001) by radio-frequency plasma-assisted molecular-beam epitaxy is presented. Four distinct regimes of InN growth are observed due to the temperature dependence of indium adatoms’ mobility and of the InN decomposition rate. At substrate temperatures higher than 450 °C, indium adatoms are highly mobile and a self-regulating mechanism of InN islands’ diameter takes place, so that a stoichiometric N:In atomic ratio on the top face of the islands is established. As a result, two-dimensional growth is possible only with In/N atomic ratio on the substrate surface equal to unity. The self-regulating mechanism could be exploited to engineer self-organized nanostructures.
ACCESSION #
16702313

 

Related Articles

  • Numerical Simulation of Some Peculiarities of the Formation of Multilayer Structures with Quantum Dots by Means of Molecular Beam Epitaxy. Egorov, V. A.; Tsyrlin, G. É. // Technical Physics Letters;Mar2000, Vol. 26 Issue 3, p220 

    Some peculiarities of the growth of nanoislands in multilayer heteroepitaxial stressed systems are studied numerically based on the theory of elastic interaction. Different scenarios of the behavior of the system of vertically coupled islands and the intervals, separating these scenarios, are...

  • Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates. Hanxuan Li; Daniels-Race, Theda // Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1367 

    Examines the influence of matrix materials on the self-organization of indium arsenide nanostructures grown on InP substrates by molecular beam epitaxy. Formation of InAs quantum dots on InAlGaAs; Size effects in the nanostructure-nanostructure interaction; Production of quantum-wire-like...

  • Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy. Cornet, D. M.; Mazzetti, V. G. M.; LaPierre, R. R. // Applied Physics Letters;1/1/2007, Vol. 90 Issue 1, p013116 

    InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {-211} family of crystal planes for all NW diameters, indicating minimal sidewall...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers. Das, A.; Magalhães, S.; Kotsar, Y.; Kandaswamy, P. K.; Gayral, B.; Lorenz, K.; Alves, E.; Ruterana, P.; Monroy, E. // Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181907 

    We report on the growth kinetics of semipolar (11-22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN...

  • Nitrogen-induced hindering of In incorporation in InGaAsN. Rubini, S.; Bais, G.; Cristofoli, A.; Piccin, M.; Duca, R.; Nacci, C.; Modesti, S.; Carlino, E.; Martelli, F.; Franciosi, A.; Bisognin, G.; de Salvador, D.; Schiavuta, P.; Berti, M.; Drigo, A. V. // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p141923 

    We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends...

  • Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy. Hertenberger, S.; Rudolph, D.; Bichler, M.; Finley, J. J.; Abstreiter, G.; Koblmüllera, G. // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p114316 

    We investigated the interwire distance dependence on the growth kinetics of vertical, high-yield InAs nanowire arrays on Si(111) grown by catalyst-free selective area molecular beam epitaxy (MBE). Utilizing lithographically defined SiO2 nanomasks on Si(111) with regular hole patterns,...

Share

Read the Article

Courtesy of your local library

Public Libraries Near You (See All)
Looking for a Different Library?

Other Topics