TITLE

Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

AUTHOR(S)
Chaldyshev, V. V.; Nielsen, B.; Mendez, E. E.; Musikhin, Yu. G.; Bert, N. A.; Zh. Ma; Holden, Todd
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
1-μm-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a ∼20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75–5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.
ACCESSION #
16702311

 

Related Articles

  • Growth and Electronic Properties Of ZnO Epilayers by Plasma-Assisted Molecular Beam Epitaxy. Murphy, T. E.; Chen, D. Y.; Phillips, J. D. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p699 

    ZnO thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (MBE). The crystalline properties of the layers as measured by x-ray diffraction were found to improve with lower growth temperatures, where the full-width at half-maximum (FWHM) of the x-ray...

  • Structural anisotropy of nonpolar and semipolar InN epitaxial layers. Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 7, p073529 

    We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO2, respectively, and semipolar (1011) InN grown on r-plane sapphire. The on-axis...

  • Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy. Cherns, D.; Meshi, L.; Griffiths, I.; Khongphetsak, S.; Novikov, S. V.; Farley, N. R. S.; Campion, R. P.; Foxon, C. T. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111911 

    Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on {1010} planes and bounded by opposite partial screw...

  • Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy. Harrison, S. E.; Schönherr, P.; Huo, Y.; Harris, J. S.; Hesjedal, T. // Applied Physics Letters;10/13/2014, Vol. 105 Issue 15, p1 

    We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from -- 180...

  • Self-formed silicon quantum wires on ultrasmooth sapphire substrates. Yanagiya, Shun-ichi; Kamimura, Shunsuke // Applied Physics Letters;9/8/1997, Vol. 71 Issue 10, p1409 

    Examines the silicon wire growth on ultrasmooth sapphire substrates. Use of the molecular beam epitaxy in the process; Application of x-ray diffractometry to check silicon wire crystallinity; Indication of silicon wire growth with substrate orientation by the diffraction pattern; Determination...

  • Chemical and structural transformation of sapphire (AI...O...) surface by plasma source nitridation. Cho, Y.; Kim, Y. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7909 

    Studies the chemical and structural changes of the sapphire substrate upon nitridation process by constricted-plasma source molecular beam epitaxy (MBE). Experimental setup of the study; Chemical analysis by x-ray photoelectron spectroscopy (XPE); Morphological change of the sapphire substrate;...

  • MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate. Chen, Yuanping; Simingalam, Sina; Brill, Gregory; Wijewarnasuriya, Priyalal; Dhar, Nibir; Kim, Jae; Smith, David // Journal of Electronic Materials;Oct2012, Vol. 41 Issue 10, p2917 

    Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Ã…, such as HgCdSe and GaSb-based type II...

  • (211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBE. Nakasu, Taizo; Kobayashi, Masakazu; Togo, Hiroyoshi; Asahi, Toshiaki // Journal of Electronic Materials;Apr2014, Vol. 43 Issue 4, p921 

    ZnTe epilayers have been grown on 2°-tilted m-plane $$\left( {10\overline{1} 0} \right)$$ sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and $$30\overline{3} 0$$...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics