Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition

Chang, W.-H.; Hsiang-Yu Chen; Chang, H.-S.; Chen, W.-Y.; Hsu, T. M.; Hsieh, T.-P.; Chyi, J.-I.; Yeh, N.-T.
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131917
Academic Journal
Electroreflectance spectroscopy was used to study the effect of InxGa1-xAs capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the InxGa1-xAs capping layer were well resolved. The energy shifts in the InxGa1-xAs capping layer show a different trend as compared to a series of referent InxGa1-xAs quantum wells. These results support the concept of strain-driven alloy decomposition during the InxGa1-xAs layer overgrowth.


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