Low-temperature processable inherently photosensitive polyimide as a gate insulator for organic thin-film transistors

Seungmoon Pyo; Hyunsam Son; Kil-Yeong Choi; Mi Hye Yi; Sung Kwon Hong
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133508
Academic Journal
We have fabricated organic thin-film transistors (OTFTs) on polyethersulfone substrate using low-temperature processable, inherently photosensitive polyimide as the gate insulator and pentacene as the active material. The polyimide was prepared through two-step reaction. The polyimide precursor, poly(amic acid), was prepared from a dianhydride and aromatic diamine through a polycondensation reaction, and subsequently converted to its corresponding polyimide by a chemical imidization. Photolithographic properties of the polyimide are investigated. The pattern resolution of the cured polyimide was about 50 μm. The pentacene OTFTs with the patterned polyimide were obtained with a carrier mobility of 0.1 cm2/V s and ION/IOFF of 5×105. The OTFT characteristics are discussed in more detail with respect to the electrical properties of the photosensitive polyimide thin film. This low-temperature photopatternable polyimide paves the way for the easy and low-cost fabrication of OTFT arrays without expensive and complicated photolithography and dry etching processes.


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