TITLE

Low-temperature processable inherently photosensitive polyimide as a gate insulator for organic thin-film transistors

AUTHOR(S)
Seungmoon Pyo; Hyunsam Son; Kil-Yeong Choi; Mi Hye Yi; Sung Kwon Hong
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated organic thin-film transistors (OTFTs) on polyethersulfone substrate using low-temperature processable, inherently photosensitive polyimide as the gate insulator and pentacene as the active material. The polyimide was prepared through two-step reaction. The polyimide precursor, poly(amic acid), was prepared from a dianhydride and aromatic diamine through a polycondensation reaction, and subsequently converted to its corresponding polyimide by a chemical imidization. Photolithographic properties of the polyimide are investigated. The pattern resolution of the cured polyimide was about 50 μm. The pentacene OTFTs with the patterned polyimide were obtained with a carrier mobility of 0.1 cm2/V s and ION/IOFF of 5×105. The OTFT characteristics are discussed in more detail with respect to the electrical properties of the photosensitive polyimide thin film. This low-temperature photopatternable polyimide paves the way for the easy and low-cost fabrication of OTFT arrays without expensive and complicated photolithography and dry etching processes.
ACCESSION #
16702290

 

Related Articles

  • Comparison of thin-film transistors fabricated at low temperatures (≤600 °C) on as-deposited and amorphized-crystallized polycrystalline Si. Kung, K. T.-Y.; Reif, R. // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1638 

    Compares the performances of thin-film transistors (TFT) fabricated on as-deposited and amorphized-crystallized polycrystalline silicon films, prepared by the low-pressure chemical-vapor deposition technique on SiO[sub2]. Ways in which fabricated TFT can be employed; Techniques through which...

  • Super-Large Domain Metal-Induced Radially Crystallized Poly-Si Made Using Ni(NO3)2/NH4OH Mixed Solution. Chunya Wu; Zhiguo Meng; Shuyun Zhao; Shaozhen Xiong; Man Wong; Hoi Sing Kwok // Journal of Electronic Materials;Sep2007, Vol. 36 Issue 9, p1160 

    By using an aqueous solution of Ni(NO3)2/NH4OH for formation of Ni media on a-Si, disk-like super-large domain metal-induced radially crystallized (S-MIRC) poly-Si was prepared. The process requires no buffer layer deposition on a-Si. The prepared S-MIRC poly-Si has an average domain size of up...

  • Influence of the dielectric roughness on the performance of pentacene transistors. Steudel, Soeren; De Vusser, Stijn; De Jonge, Stijn; Janssen, Dimitri; Verlaak, Stijn; Genoe, Jan; Heremans, Paul // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4400 

    The properties of the dielectric strongly influence the performance of organic thin-film transistors. In this letter, we show experimental results that quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of it. We consider the...

  • Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates. Zhu, Z.-T.; Menard, E.; Hurley, K.; Nuzzo, R. G.; Rogers, J. A. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133507 

    Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple...

  • High-performance fullerene C60 thin-film transistors operating at low voltages. Kitamura, Masatoshi; Kuzumoto, Yasutaka; Kamura, Masakazu; Aomori, Shigeru; Arakawa, Yasuhiko // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p183514 

    Low-voltage operation of fullerene C60 thin-film transistors (TFTs) has been realized using zirconium-silicon oxide (ZSO) as a gate insulator. The gate insulator consisted of triple layers of SiO2/ZSO/SiO2 deposited by rf sputtering. The C60 TFTs with the insulators operated at a low voltage of...

  • Polycrystalline silicon thin-film transistors on quartz fiber. Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p203518 

    We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs...

  • Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors. Choi, Jeong-M.; Jiyoul Lee; Hwang, D. K.; Jae Hoon Kim; Seongil Im; Kim, Eugene // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p043508 

    We report on the photoresponse from tetracene-based and pentacene-based thin-film transistors (TFTs) with semitransparent NiOx source/drain electrodes and SiO2/p+-Si substrate. Both organic TFTs have been fabricated with identical channel thickness and device geometry. Compared with...

  • Low voltage complementary organic inverters. De Vusser, Stijn; Steudel, Soeren; Myny, Kris; Genoe, Jan; Heremans, Paul // Applied Physics Letters;4/17/2006, Vol. 88 Issue 16, p162116 

    We have developed a method for integrating n- and p-type organic thin-film transistors (OTFTs) on the same substrate. An integrated shadow mask was used for the n- and p-type semiconductor patterning. The integrated shadow mask can be aligned with submicron accuracy relative to the OTFT...

  • Enhanced performance of solution-processed regioregular poly(3-hexylthiophene) thin-film transistors using planar bottom-contact architecture. Xu, Mingsheng; Nagai, Keita; Nakamura, Masakazu; Kudo, Kazuhiro; Iizuka, Masaaki // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p223512 

    The authors report on the solution-processed planar bottom-contact (pBC) organic thin-film transistors and contact effect on gate threshold voltage incorporating regioregular poly(3-hexylthiophene) active layer. By employing pBC configuration, the transistors on SiO2/Si without surface...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics