Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy

Shoukri, Kareem M.; Haddara, Yaser M.; Knights, A. P.; Coleman, P. G.
March 2005
Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131923
Academic Journal
Silicon–germanium layers of either 200 nm or 250 nm have been grown via molecular-beam epitaxy (MBE) on p-type (001) silicon substrates. Each sample was prepared using a unique combination of buffer-layer type, buffer-layer growth temperature, and layer Ge content. Vacancy-type defects have been identified using beam-based positron annihilation. These results, combined with those from previous work, indicate the size and concentration of defects in MBE grown SiGe layers depend strongly upon the buffer-layer growth temperature (T). For T>500 °C vacancy point defect concentrations are below the detectable limit of the measurement. As T is decreased to 300 °C, vacancy clusters form in the buffer layer and point defects appear in the SiGe film, even for a SiGe growth temperature of 500 °C.


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