TITLE

Size, shape, and ordering of SiGe/Si(001) islands grown by means of liquid phase epitaxy under far-nonequilibrium growth conditions

AUTHOR(S)
Hanke, M.; Boeck, T.; Gerlitzke, A.-K.; Syrowatka, F.; Heyroth, F.; Köhler, R.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p142101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Applying scanning electron microscopy, we have studied the evolution of shape and lateral positional correlation of Si1-xGex/Si(001) Stranski–Krastanov islands grown by means of liquid phase epitaxy (LPE). However, in contrast to conventional near-equilibrium LPE, a distinctly higher cooling rate of 10 K/min ensures extremly nonequilibrium growth conditions. The facet inclination of subsequent island stages decreases from nearly vertical sidewalls toward {111}- and {101}-type facets. Energy dispersive x-ray microanalysis yields a size-independent germanium content of 8.9% within islands between 760 and 1700 nm base width which is—by more than a factor of 2—smaller than islands of the same concentration grown in a near-equilibrium LPE process. Square-like formations of subsequently smaller islands around a large central island indicate only next to island interactions during the lateral self-assembling.
ACCESSION #
16669647

 

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