Size, shape, and ordering of SiGe/Si(001) islands grown by means of liquid phase epitaxy under far-nonequilibrium growth conditions

Hanke, M.; Boeck, T.; Gerlitzke, A.-K.; Syrowatka, F.; Heyroth, F.; Köhler, R.
April 2005
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p142101
Academic Journal
Applying scanning electron microscopy, we have studied the evolution of shape and lateral positional correlation of Si1-xGex/Si(001) Stranski–Krastanov islands grown by means of liquid phase epitaxy (LPE). However, in contrast to conventional near-equilibrium LPE, a distinctly higher cooling rate of 10 K/min ensures extremly nonequilibrium growth conditions. The facet inclination of subsequent island stages decreases from nearly vertical sidewalls toward {111}- and {101}-type facets. Energy dispersive x-ray microanalysis yields a size-independent germanium content of 8.9% within islands between 760 and 1700 nm base width which is—by more than a factor of 2—smaller than islands of the same concentration grown in a near-equilibrium LPE process. Square-like formations of subsequently smaller islands around a large central island indicate only next to island interactions during the lateral self-assembling.


Related Articles

  • A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum. Lebedev, A. A.; Zelenin, V. V.; Abramov, P. L.; Bogdanova, E. V.; Lebedev, S. P.; Nel'son, D. K.; Razbirin, B. S.; Shcheglov, M. P.; Tregubova, A. S.; Suvajarvi, M.; Yakimova, R. // Semiconductors;Mar2007, Vol. 41 Issue 3, p263 

    3 C-SiC epitaxial layers with a thickness of up to 100 µm were grown on 6 H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3–0.5 cm2 and uncompensated donor concentration N d − N a ∼ (1017–1018)...

  • Synthesis and study of cerium(IV) polytungstate nanolayers. Semischenko, K.; Stepanenko, I.; Gulina, L.; Tolstoi, V. // Russian Journal of General Chemistry;Jun2011, Vol. 81 Issue 6, p1075 

    For the first time the conditions for the synthesis of cerium(IV) polytungstate nanolayers on the silicon surface by the method of ion layering were defined. The layers were studied by scanning electron microscopy, X-ray microanalysis and transmission FT-IR spectroscopy. The synthetized layer is...

  • Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces. Maruno, S.; Fujita, S. // Applied Physics Letters;4/15/1996, Vol. 68 Issue 16, p2213 

    Examines surfactant-mediated heteroepitaxy of germanium (Ge) on partially gallium-terminated silicon(111) surfaces. Use of scanning reflection electron and scanning tunneling microscopies; Comparison between two-dimensional island and pseudomorphic growth; Location of irregular growth of the Ge...

  • Structure of Intermetallic Al-Si Coating on Inconel 617. Kochmańska, Agnieszka; Kochmański, Paweł // Materials Science Forum;2014, Vol. 782, p594 

    Aluminide coatings were deposited on a nickel superalloy using the slurry method. The slurry was an active mixture containing aluminium and silicon powders, an activator and a binder. The coatings were obtained by annealingin an argon atmosphere. The structure of the coatings was dual-zone and...

  • Scanning electron microscopy and energy dispersive analysis: applications in the field of cultural heritage. Schreiner, Manfred; Melcher, Michael; Uhlir, Katharina // Analytical & Bioanalytical Chemistry;Feb2007, Vol. 387 Issue 3, p737 

    Scanning electron microscopy has been extensively used for the material characterization of objects of artistic and archaeological importance, especially in combination with energy dispersive X-ray microanalysis (SEM/EDX). The advantages and limitations of SEM/EDX are presented in a few case...

  • On the characterisation of grown-in defects in Czochralski-grown Si and Ge. Vanhellemont, J.; Steenbergen, J. Van; Holsteyns, F.; Roussel, P.; Meuris, M.; Młynarczyk, K.; Śpiewak, P.; Geens, W.; Romandic, I.. // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p24 

    High yield processing of advanced integrated devices poses stringent demands on substrate and active device layer quality. Wafers have to be free of electrically active defects and should therefore be free of so called large pit defects and Crystal Originated Particles (COP’s) which can...

  • Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy. Shintri, Shashidhar; Rao, Sunil; Sarney, Wendy; Garg, Saurabh; Palosz, Witold; Trivedi, Sudhir; Wijewarnasuriya, Priyalal; Bhat, Ishwara // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1637 

    We report an investigation of epitaxial germanium grown by chemical vapor deposition (CVD) on arsenic-terminated (211)Si, which is the preferred substrate in the USA for fabrication of night-vision devices based on mercury cadmium telluride (MCT) grown by molecular-beam epitaxy (MBE). The films...

  • Hydrothermally fabricated epitaxial PbTiO3 patterns patterned lithographically by etching in hydrothermal KOH solution. Ahn, S. H.; Choi, S. K. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113102 

    We investigated the chemical etching behavior of heteroepitaxial PbTiO3 films on Nb-doped SrTiO3 substrate with mono-+c-domain fabricated by using hydrothermal epitaxy. The as-fabricated films were patterned lithographically into submicron-sized patterns with various lateral sizes using KOH...

  • Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors. Semenov, A. N.; Terent'ev, Ya. V.; Meltser, B. Ya.; Solov'ev, V. A.; Popova, T. V.; Nashchekin, A. V.; Andreev, I. A.; Kunitsyna, E. V.; Usikova, A. A.; Yakovlev, Yu. P.; Ivanov, S. V. // Semiconductors;May2010, Vol. 44 Issue 5, p672 

    The features of growth of GaInAsSb alloy with In content as high as 25 mol % lattice-matched to GaSb by molecular beam epitaxy are studied. These alloys are promising for use as the active region of photodetector structures of the mid-infrared range. The results of the study of these alloys by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics