TITLE

Examining the screening limit of field effect devices via the metal-insulator transition

AUTHOR(S)
Hong, X.; Posadas, A.; Ahn, C. H.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p142501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic screening length, the distance over which an electric field is attenuated in a material, imposes a lower physical bound on the lateral size scaling of semiconductor field effect devices. Alternatives will be needed to achieve devices whose characteristic dimensions approach a nanometer. In this work, we demonstrate the atomic-scale nature of screening at high electron densities, using the polarization field of a ferroelectric oxide, Pb(Zr,Ti)O3, to electrostatically modulate the metallicity of ultrathin manganite La1-xSrxMnO3 (LSMO) films near the metal-insulator transition. Within the screening length, the transport characteristics of LSMO vary sharply at the scale of a single atomic layer.
ACCESSION #
16669636

 

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