Activation volume for phosphorus diffusion in silicon and Si0.93Ge0.07

Zhao, Yuechao; Aziz, Michael J.; Zangenberg, Nikolaj R.; Larsen, Arne Nylandsted
April 2005
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p141902
Academic Journal
The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07 and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Ω for the unalloyed Si, and (+0.01±0.06) Ω for Si0.93Ge0.07. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz’s phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment.


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