Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

Liu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Navaretti, P.; Groom, K. M.; Hopkinson, M.; Hogg, R. A.
April 2005
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143108
Academic Journal
The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to ∼1.43 μm. For Sb compositions above 14%, the system becomes Type II, with a decrease of the photoluminescence (PL) efficiency. At a composition of 14%, the room-temperature PL efficiency is maximized, and is also significantly enhanced when compared to that of conventional InGaAs-capped InAs QDs grown under the same conditions. Room-temperature ground-state lasing at 1.292 μm is demonstrated for an InAs/GaAsSb/GaAs structure.


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