Gate current leakage and breakdown mechanism in unpassivated AlGaN/GaN high electron mobility transistors by post-gate annealing

Hyeongnam Kim; Jaesun Lee; Dongmin Liu; Wu Lu
April 2005
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143505
Academic Journal
Gate leakage/breakdown mechanism in unpassivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated by performing temperature-dependent pulsed current–voltage (I–V) and current transient measurements of AlGaN/GaN HEMTs without and with annealing after Schottky gate formation. After post-gate annealing, the devices exhibited significantly smaller gate leakage current and higher breakdown voltage even without any gate dielectrics or passivation layer. The temperature-dependent current transient measurements show that the current dispersion in the unannealed HEMTs is attributed to traps with an emission time constant (tE) of ∼0.5 μs at 295 K and an activation energy of ∼38 meV. On the contrary, the 20-min annealed devices have traps with tE of 21.6 μs at 295 K and an activation energy of ∼0.31 eV. The results suggest that the post-gate annealing removes shallow traps, and creates or activates deeper traps. We propose that the breakdown and gate leakage current is mainly due to the emission current from shallow traps in unpassivated AlGaN/GaN HEMTs. The breakdown voltage improvement after the post-gate annealing is due to the removal of shallow traps near the Schottky gate metal/AlGaN interface.


Related Articles

  • Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors. Ling Xia; del Alamo, Jesús A. // Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p243504 

    This letter reports on a study of the impact of <110> uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These...

  • Photovoltaic effects on pinch-off voltage and open-circuit voltage in high-electron-mobility-transistor and Schottky-diode configurations. Kim, D. M. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1553 

    Photovoltaic effects on the pinch-off voltage (V[sub P]) in the high-electron-mobility-transistor (HEMT) and the open-circuit photovoltage (V[sub opt,OC]) in the Schottky-diode configurations are characterized as a function of the optical input (P[sub opt]). The open-circuit photovoltage (V[sub...

  • Application of a new airbridge-gate structure for high-performance... Wen-Chau Liu; Wen-Lung Chang // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p1996 

    Demonstrates an airbridge-gate Ga[sub 0.51]In[sub 0.49]P/In[sub 0.15]Ga[sub 0.85]As/gallium arsenide (GaAs) pseudomophic heterostructure field-effect transistor (HFET) with multiple piers. Employment of high Schottky barrier gallium indium phosphide (GaInP); High gate-to-drain breakdown voltage.

  • Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Kang, B. S.; Kim, J.; Jang, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N. G.; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253502 

    The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the...

  • Optimization of Electron Velocity in p-HEMT. Mil'shtein, S.; Somisetty, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p485 

    Detailed characterization of the electron mobility along the channel reveals that average mobility can be improved and the performance of both MESFET and HEMT could be optimized. A detailed electric field profile of the devices was modeled using commercially available Silvacoâ„¢ software....

  • Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors. Ji, Dong; Liu, Bing; Lu, Yanwu; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo // Applied Physics Letters;3/26/2012, Vol. 100 Issue 13, p132105 

    This study investigated on polarization-induced remote interfacial charge scattering, a scattering mechanism caused by the interfacial polarization charge, for Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors (HEMTs). Results show that remote interfacial charge scattering...

  • Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Radhakrishnan, K.; Dharmarasu, N.; Sun, Z.; Arulkumaran, S.; Ng, G. I. // Applied Physics Letters;12/6/2010, Vol. 97 Issue 23, p232107 

    AlGaN/GaN high-electron-mobility transistor structures grown on 100 mm high-resistivity Si(111) substrates using plasma-assisted molecular beam epitaxy are reported. The two-dimensional electron gas (2DEG) formation in the heterostructures was realized by the growth optimization of two-step low...

  • Scattering mechanisms limiting two-dimensional electron gas mobility in Al...Ga...N/GaN modulation-doped field-effect transistors. Antoszewski, J.; Gracey, M. // Journal of Applied Physics;4/15/2000, Vol. 87 Issue 8, p3900 

    Presents information on a study which examined the dependence of electron mobility on the two-dimensional electron gas sheet density in aluminum gallium nitrogen/gallium nitrogen heterojunction structures. Methodology of the study; Results and discussion on the study.

  • Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN. Liu, Y.; Egawa, T.; Jiang, H.; Zhang, B.; Ishikawa, H.; Hao, M. // Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p6030 

    Pd/Ti/Au and Ni/Au Schottky barrier diodes (SBDs) were demonstrated on quaternary AlInGaN. Current–voltage properties indicated that near-ideal and high-performance SBDs had been realized with ideality factor of 1.05, 1.07 and barrier height of 1.32, 0.98 eV for Pd and Ni SBDs,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics