TITLE

Band-gap discontinuity in GaN0.02As0.87Sb0.11/GaAs single-quantum wells investigated by photoreflectance spectroscopy

AUTHOR(S)
Kudrawiec, R.; Ryczko, K.; Misiewicz, J.; Yuen, H. B.; Bank, S. R.; Wistey, M. A.; Bae, H. P.; Harris, James S.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p141908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN0.02As0.87Sb0.11/GaAs single-quantum wells have been investigated by photoreflectance (PR) at room temperature. PR features related to the ground and excited state transitions have been clearly observed. The experimental data have been compared with the calculations in the envelope function formalism taking account the effect of strain. The band gap lowering and the increase in the electron effective mass due to the incorporation of nitrogen atoms into GaAsSb have been included. Excellent agreement between experimental data and calculation results have been found for band structure Type-I with the conduction-band offset ratio of 50%.
ACCESSION #
16669592

 

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