Oxygen tracer diffusion in Pb(Zr,Ti)O3 thin film enhanced by catalytic platinum

Cross, J. S.; Kurihara, K.; Kamehara, N.; Haneda, H.; Sakaguchi, I.
April 2005
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p141909
Academic Journal
The self-diffusion of 18O into Pb(Zr,Ti)O3 [PZT] thin films on Pt/TiO2 coated Si wafers from an ambient of 99% 18O2 gas tracer was investigated by secondary ion mass spectroscopy (SIMS) when annealed at 450 °C, 550 °C, and 650 °C for up to 30 min. The results show that the 18O profile in PZT changed significantly with anneal temperature and the highest concentration of exchanged oxygen was at the PZT/Pt interface when annealed at 650 °C. Modeling of the oxygen tracer diffusion profiles from the 450 °C and 550 °C data yielded an activation energy of 0.83 eV when assuming 1D diffusion. Simulation of the 650 °C SIMS data indicated that the oxygen was dissociating on the catalytic Pt film underneath the PZT and then back diffusing into the PZT causing a higher concentration of oxygen at the PZT/Pt interface than at the surface.


Related Articles

  • p-type conduction in N–Al co-doped ZnO thin films. Lu, J. G.; Ye, Z. Z.; Zhuge, F.; Zeng, Y. J.; Zhao, B. H.; Zhu, L. P. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3134 

    p-type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Ω cm with a Hall mobility of...

  • An isotopic labeling study of the diffusion mechanism during oxidation of Si(100) in water vapor by successive oxidation. Zhong, C.; Jiang, Y. M.; Gong, J.; Deng, B.; Li, J. // Applied Physics A: Materials Science & Processing;Nov2009, Vol. 97 Issue 3, p671 

    The diffusion mechanism during the wet oxidation of Si(100) at 1373 K was investigated by successive oxidations finally containing isotopic water. SiO2 was first thermally grown on Si in non-labeled oxidizing ambient (dry O2 or H2O) followed by isotopic water (HO) to trace 18O species in SiO2....

  • B diffusion in implanted Ni2Si and NiSi layers. Blum, I.; Portavoce, A.; Chow, L.; Mangelinck, D.; Hoummada, K.; Tellouche, G.; Carron, V. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p054102 

    B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400–550 °C). B diffusion appears...

  • Properties of phosphorus doped ZnO. von Wenckstern, H.; Benndorf, G.; Heitsch, S.; Sann, J.; Brandt, M.; Schmidt, H.; Lenzner, J.; Lorenz, M.; Kuznetsov, A.Y.; Meyer, B.K.; Grundmann, M. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 88 Issue 1, p125 

    We report the electrical and optical properties of P-doped epitaxial ZnO thin films grown heteroepitaxially on sapphire substrates or homoepitaxially on ZnO wafers grown by the hydrothermal method, respectively. As-grown heteroepitaxial thin films exhibit semi-insulating to strongly n-conducting...

  • Concentric ring pattern formation in heated chromium-gold thin films on silicon. Randhawa, Jatinder S.; Bernfeld, Adam; Keung, Michael; Volinsky, Alex A.; Gracias, David H. // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p211907 

    Patterns that formed spontaneously upon heating thermally evaporated thin films of gold (Au) and chromium (Cr) on silicon (Si) substrates to 500 °C were investigated. A variety of patterns were observed. The type of pattern formed correlated with the thickness ratio of Cr to Au. The most...

  • Diffusion of iron in lithium niobate: a secondary ion mass spectrometry study. Ciampolillo, M.; Argiolas, N.; Zaltron, A.; Bazzan, M.; Sada, C. // Applied Physics A: Materials Science & Processing;Oct2011, Vol. 105 Issue 1, p111 

    Iron-doped X-cut lithium niobate crystals were prepared by means of thermal diffusion from thin film varying in a systematic way the process parameters such as temperature and diffusion duration. Secondary Ion Mass Spectrometry was exploited to characterize the iron in-depth profiles. The...

  • Quantification of Shallow-junction Dopant Loss during CMOS Process. Buh, G. H.; Park, T.; Jee, Y.; Hong, S. J.; Ryoo, C.; Yoo, J.; Lee, J. W.; Yon, G. H.; Jun, C. S.; Shin, Y. G.; Chung, U.-In; Moon, J. T. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p275 

    We analyzed dopant concentration and profiles in source drain extension (SDE) by using in-line low energy electron induced x-ray emission spectrometry (LEXES), four point probe (FPP), and secondary ion mass spectroscopy (SIMS). By monitoring the dopant dose with LEXES, dopant loss in...

  • Fluorine-vacancy complexes in Si-SiGe-Si structures. Abdulmalik, D. A.; Coleman, P. G.; El Mubarek, H. A. W.; Ashburn, P. // Journal of Applied Physics;7/1/2007, Vol. 102 Issue 1, p013530 

    Fluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via interstitial...

  • Diffusion of oxygen tracer into deuterium-gas-baked IrOx/Pb(Zr,TiO3)Pt capacitors and Pb(Zr,Ti)O3Pt films. Cross, J. S.; Kurihara, K.; Haneda, H. // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p094107 

    Deuterium gas (D2) ambient heat treatment of ferroelectric Pb(Zr,Ti)O3 (PZT) thin-film capacitors with a top electrode of iridium oxide and a bottom electrode of platinum showed significant polarization loss when baked at 200 °C at a pressure of 5 Torr. The D2 gas treatment of the capacitors...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics