TITLE

Ambipolar organic field-effect transistor using gate insulator hysteresis

AUTHOR(S)
Mizuno, Eriko; Taniguchi, Masateru; Kawai, Tomoji
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143513
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An organic field-effect transistor based on a copper-phthalocyanine and cyanoethylpullulan gate insulator showed ambipolar operation using gate insulator hysteresis, which appeared at less than 1 mHz. The gate insulator possesses spontaneous polarization of 1.6 μC/cm2 and a coercive electric field of 50 kV/cm. After poling in an effort to obtain a large amount of accumulated charge, the field-effect mobilities of the hole and electron were 4.1×10-3 and 3.5×10-6 cm2/Vs, respectively. The on/off ratio at VSG=±10 V was 6×104 for the p type and 70 for the n type.
ACCESSION #
16669569

 

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