TITLE

Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures

AUTHOR(S)
Berdinsky, A. S.; Fink, D.; Yoo, J. B.; Chun, H. G.; Chadderton, L. T.; Petrov, A. V.
PUB. DATE
May 2005
SOURCE
Applied Physics A: Materials Science & Processing;May2005, Vol. 80 Issue 8, p1711
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.
ACCESSION #
16600406

 

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