TITLE

Anisotropic Mg incorporation in GaN growth on nonplanar templates

AUTHOR(S)
Ren, Dawei; Dapkus, P. Daniel
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p121901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the transport properties in the direction perpendicular to the substrate of regioregular polys(3-hexyl-thiophened) of different molecular weights (MW) in a diode geometry. In these devices, which exhibit space-charge-limited behavior, we find that the mobility values at room temperature increase from 1.33 ×10-5 cm2 /V s to 3.30 × 10-4 cm2 /V s as the MW is increased from 2.9 to 31.1 kg/mol. The mobility is found to be field independent for high MW films, but field dependent for the low MW films. The current-voltage characteristics of the diodes are also studied as a function of temperature from 160 K to 300 K. The activation energy for carrier transport, extracted from the Arrhenius plot, is found to decrease gradually from 143 meV to 126 meV as the MW is increased.
ACCESSION #
16581768

 

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