On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics

Mönch, Winfried
March 2005
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p122101
Academic Journal
The interface-induced gap states (IFIGS) are the fundamental mechanism which determines the band structure lineup at semiconductor interfaces. The valence-band offsets of semiconductor heterostructures and the barrier heights of Schottky contacts are given by the branch-point energies of the IFIGS of the semiconductors and respective electric-dipole terms. The branch-point energies of SiO2, Si3N4, and of the high-κ dielectrics Al2O3, HfO2, and ZrO2 are determined as 3.99±0.10, 1.93±0.14, 3.23±0.42, 2.62±0.18, and ≈3.2 eV, respectively, from experimental valence-band offsets of heterostructures of these insulators.


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