Current transport property of n-GaN/n-6H–SiC heterojunction: Influence of interface states

Huang, Y.; Chen, X. D.; Fung, S.; Beling, C. D.; Ling, C. C.; Dai, X. Q.; Xie, M. H.
March 2005
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p122102
Academic Journal
Heterostructures of n-GaN/n-6H–SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current–voltage (I–V), capacitance–voltage (C–V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I–V results reveal a rectifying barrier in the n-GaN/n-6H–SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4–1.1 eV for the HVPE samples and 0.5 eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures.


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