Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes

Choi, Jeong-M.; Hwang, D. K.; Kim, Jae Hoon; Im, Seongil
March 2005
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p123505
Academic Journal
We report on the fabrication of pentacene-based transparent thin-film transistors (TTFT) that consist of NiOx, AlOx, and indium-tin-oxide (ITO) for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The NiOx S/D electrodes of which the work function is well matched to that of pentacene were deposited on a 50-nm-thick pentacene channel by thermal evaporation of NiO powder and showed a moderately low but still effective transmittance of ∼25% in the visible range along with a good sheet resistance of ∼60 Ω/□. The maximum saturation current of our pentacene-based TTFT was about 15 μA at a gate bias of -40 V showing a high field effect mobility of 0.9 cm2/Vs in the dark, and the on/off current ratio of our TTFT was about 5×105. It is concluded that jointly adopting NiOx for the S/D electrode and AlOx for gate dielectric realizes a high-quality pentacene-based TTFT.


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