Comparison of the electronic properties of sublimation- and vapor-Bridgman-grown crystals of tetracene

Niemax, J.; Tripathi, A. K.; Pflaum, J.
March 2005
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p122105
Academic Journal
The hole mobilities in a vapor-Bridgman-grown crystal and in sublimation-grown crystals of tetracene were measured along the c*-direction in a temperature range from 300 to 450 K by the time-of-flight method. The mobility was found to increase as a function of temperature in the vapor-Bridgman-grown crystal, indicating that the transport was thermally activated. After reaching its maximum of about 1 cm2/V s at 320 K, the mobility in the sublimation-grown crystals decreased with temperature in accordance with band transport models. Gas chromatography measurements indicated that the difference in the electronic transport properties could be related to a higher concentration of chemical impurities in the vapor-Bridgman crystal.


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