F-doping effects on electrical and optical properties of ZnO nanocrystalline films

Xu, H. Y.; Liu, Y. C.; Mu, R.; Shao, C. L.; Lu, Y. M.; Shen, D. Z.; Fan, X. W.
March 2005
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p123107
Academic Journal
F-doped and undoped ZnO nanocrystalline films were prepared from thermal oxidation of ZnF2 films deposited on a silica substrate by electron beam evaporation. The F-doped ZnO film has very low electrical resistivity of 7.95×10-4 Ω cm and a high optical transmittance. The study also indicated that (1) the substitutional F atoms in the film serve as donors to increase the carrier concentration and the optical band gap with respect to undoped ZnO film, and (2) F passivation reduces the known number of Os2-/Os- surface states and increases carrier mobility.


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