Potential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole

Ludeke, R.; Narayanan, V.; Gusev, E. P.; Cartier, E.; Chey, S. J.
March 2005
Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p122901
Academic Journal
Surface potential profiles of the junction area of a cleaved n-Si(100)/HfO2/p+-polycrystalline silicon (poly-Si) gate stack reveal a dipole potential in the oxide, hole trapping at the HfO2/poly-Si interface, with the Fermi level ∼0.4 eV below the Si conduction bandedge and enhanced and inhomogeneous hole depletion in the p+-poly-Si. The dipole accounts for band bending reduction in the n-Si and is consistent with flatband voltage shifts reported for similar gate stacks.


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