TITLE

Study of the dominant luminescence mechanism in InGaN/GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

AUTHOR(S)

Lai, Yen-Lin; Liu, Chuan-Pu; Chen, Zheng-Quan

PUB. DATE

March 2005

SOURCE

Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p121915

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

High quality green (508 nm) and blue (424 nm) light emitting diodes (LEDs) from InGaN/GaN multiple quantum wells with stable ultrasmall indium-rich clusters of 2 nm and 3 nm from two different nominal indium contents have been grown by metalorganic chemical vapor deposition. Comprehensive calculations including polarization, piezoelectric field, and size effect help derive an indium composition of 59% and 31% for the In-rich clusters of 2 nm and 3 nm, which agrees amazingly well with the asymmetric phase diagram for phase separation. From this model, we can further demonstrate that the dominant emitting mechanism for green LED is the polarization field, however, for blue LED, both the size effect and polarization effect are equally important.

ACCESSION #

16581699

 

Related Articles

• Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer. Tae-Young Park; Yong-Seok Choi; Jang-Won Kang; Jae-Ho Jeong; Seong-Ju Park; Dong Min Jeon; Je Won Kim; Yong Chun Kim // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051124 

  Ga-doped ZnO (ZnO:Ga) films were grown by metalorganic chemical vapor deposition as transparent conducting layers for GaN light-emitting diodes (LEDs). The forward voltage of LEDs with ZnO:Ga was 3.3 V at 20 mA. The low forward voltage was attributed to the removal of a resistive ZnGa2O4 phase,...

• Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN. Dahal, R.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M. // Applied Physics Letters;7/21/2008, Vol. 93 Issue 3, p033502 

  Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward...

• Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode. Wenfeng Zhang; Jiansheng Jie; Zhubing He; Silu Tao; Xia Fan; Yechun Zhou; Guodong Yuan; Linbao Luo; Wenjun Zhang; Chun-Sing Lee; Shuit-Tong Lee // Applied Physics Letters;4/14/2008, Vol. 92 Issue 15, p153312 

  Zn-doped In2O3 nanowires (NWs) were prepared by simple chemical vapor deposition and were systematically characterized. Field-effect transistors (FETs) constructed from the Zn-doped In2O3 nanowires exhibit excellent performance characteristics such as high mobility, “high-on-state”...

• Efficient hole transport in asymmetric coupled InGaN multiple quantum wells. Jiang-Yong Zhang; Cai, Li-E.; Bao-Ping Zhang; Xiao-Long Hu; Fang Jiang; Jin-Zhong Yu; Qi-Ming Wang // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p161110 

  InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission...

• Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Arif, Ronald A.; Ee, Yik-Khoon; Tansu, Nelson // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091110 

  Staggered InGaN quantum wells (QWs) grown by metal-organic chemical vapor deposition are demonstrated as improved active region for visible light emitters. Theoretical studies indicate that InGaN QW with step-function-like In content in the quantum well offers significantly improved radiative...

• Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition. Kim, Kwang-Choong; Schmidt, Mathew C.; Sato, Hitoshi; Wu, Feng; Fellows, Natalie; Jia, Zhongyuan; Saito, Makoto; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Fujito, Kenji // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p181120 

  Nonpolar m-plane (1100) InGaN-based light emitting diodes (LEDs) grown on low-extended defect density bulk m-plane GaN substrates offer great potential for high performance devices due to the absence of polarization-related internal electric fields. To optimize the quantum...

• Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes. Manh-Ha Doan; Jaejin Lee // Advances in Condensed Matter Physics;2014, p1 

  In addition to the standard 447nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition....

• Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates. Egawa, T.; Hasegawa, Y. // Applied Physics Letters;11/13/1995, Vol. 67 Issue 20, p2995 

  Examines the degradation of the AlGaAs/GaAs well laser diodes on silicon substrates grown by metalorganic chemical vapor deposition. Cause of increase in threshold current and decrease in differential quantum efficiency; Effect of the defect-assisted impurity diffusion; Reason for the rapid...

• 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine. Dong, Jian-Rong; Teng, Jing-Hua; Chua, Soo-Jin; Foo, Boon-Chin; Wang, Yan-Jun; Yuan, Hai-Rong; Yuan, Shu // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p596 

  Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those...

Read the Article