Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions

Löffler, A.; Reithmaier, J. P.; Sçk, G.; Hofmann, C.; Reitzenstein, S.; Kamp, M.; Forchel, A.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111105
Academic Journal
Vertical-emitting AlAs/GaAs microcavity pillars with a type of GaInAs quantum dots within a one λ cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27 700 for a micropillar with a diameter of 4 μm. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.7In0.3As nucleation layer.


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