TITLE

Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth

AUTHOR(S)
Ren, Dawei; Zhou, Wei; Dapkus, P. Daniel
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report here the formation of nonplanar GaN templates, which consist of low-dislocation-density, naturally grown GaN ridge mesas, as a mean to facilitate the fabrication of buried heterostructure lasers. Defect reduction is realized by introducing a two-step lateral epitaxial overgrowth procedure that utilizes dislocation bending in the formation of pyramidal mesas to eradicate the threading dislocations that originate from a planar buffer layer. Transmission electron microscopy and atomic force microscopy indicate a mesa top facet having low defect density (∼8×107 cm-2), atomic flatness (∼0.29 nm mean roughness). Our demonstration has opened the possibility of forming buried heterostructure lasers on nonplanar GaN templates.
ACCESSION #
16581662

 

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