Vertical electronic coupling between InAs/InP quantum-dot layers emitting in the near-infrared range

Miska, P.; Even, J.; Paranthoen, C.; Dehaese, O.; Jbeli, A.; Senès, M.; Marie, X.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111905
Academic Journal
Stacked InAs quantum dots (QDs) grown on InP(113)B are analyzed both experimentally and theoretically in order to study the influence of the electronic vertical coupling between the QD layers. Improved growth conditions enable us to control the optimum QD height of the samples, thus yielding an emission wavelength of our nanostructures at about 1.55 μm at room temperature. Three samples containing three QD layers with different vertical spacing are studied. The QD electronic structure is studied by continuous-wave photoluminescence and time-resolved photoluminescence experiments at low temperature. A simplified theoretical model is developed, yielding results consistent with experimental data. This analysis evidences the electronic coupling between the QD layers.


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