Enhanced performance of bipolar cascade light-emitting diodes by doping the aluminum oxide apertures

Siskaninetz, W. J.; Ehret, J. E.; Lott, J. A.; Griffith, J. C.; Nelson, T. R.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111108
Academic Journal
Performance improvements in multiple-stage, single-cavity bipolar cascade light-emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained by doping intracavity aluminum oxide apertures with silicon. This doping results in a reduced electron energy barrier and, therefore, a reduced series resistance which leads to better power and heating characteristics. Nearly 50% reductions in operating voltages, 200% increases in light power, and increased operating range are demonstrated. We discuss the direct implications of these results for the design of bipolar cascade vertical-cavity surface-emitting lasers.


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