TITLE

Evolution of elongated (In,Ga)As–GaAs(100) islands with low indium content

AUTHOR(S)
Cho, S. O.; Wang, Zh. M.; Salamo, G. J.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p113106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nucleation and growth of (In,Ga)As–GaAs(100) islands with low In content by molecular-beam epitaxy is investigated by scanning tunneling microscopy. The islands tend to nucleate at upper convex edges of surface steps due to elastic strain relaxation. They are elongated along [01-1] with a flat top (100) facet. The growth of the islands, mainly through uphill transport of the (In,Ga)As material, is characterized by shrinking of the top (100) facet but the ratio of island elongation keeps constant.
ACCESSION #
16581620

 

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