Evolution of elongated (In,Ga)As–GaAs(100) islands with low indium content

Cho, S. O.; Wang, Zh. M.; Salamo, G. J.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p113106
Academic Journal
Nucleation and growth of (In,Ga)As–GaAs(100) islands with low In content by molecular-beam epitaxy is investigated by scanning tunneling microscopy. The islands tend to nucleate at upper convex edges of surface steps due to elastic strain relaxation. They are elongated along [01-1] with a flat top (100) facet. The growth of the islands, mainly through uphill transport of the (In,Ga)As material, is characterized by shrinking of the top (100) facet but the ratio of island elongation keeps constant.


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