X-ray absorption near-edge fine structure study of AlInN semiconductors

Qixin Guo; Ding, Jian; Tanaka, Tooru; Nishio, Mitsuhiro; Ogawa, Hiroshi
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111911
Academic Journal
We have carried out the x-ray absorption near-edge fine structure (XANES) measurements of AlInN at Al K edge and the self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the Al K-edge XANES spectra of AlInN are the fingerprints of their composition. The theoretical results could give a reasonable reproduction of the experimental spectral structures. This type of combined use of the experimental XANES and the theoretical calculations must be a powerful tool for systematic and qualitative analysis of the structural and electronic structures of nitride semiconductors.


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