Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films
Related Articles
- Mn12-acetate film pattern generated by photolithography methods. Kim, K.; Seo, D. M.; Means, J.; Meenakshi, V.; Teizer, W.; Zhao, H.; Dunbar, K. R. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3872
We demonstrate a straightforward way to lithographically fabricate Mn12-acetate thin film patterns on Si/SiO2 surfaces, a significant step in light of the chemical volatility of this organic complex. Atomic force micrographs show low surface roughness. X-ray photoelectron spectroscopy data and...
- Band alignment in ultrathin Hf–Al–O/Si interfaces. Jin, H.; Oh, S. K.; Kang, H. J.; Lee, S. W.; Lee, Y. S.; Cho, M.-H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212902
Band alignment in Hf–Al–O thin films, grown on Si(100) by atomic layer deposition, was determined via x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The changes in conduction band offset, valence band offset, and bandgap were obtained as a...
- Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer. Dan-Dan Zhang; Jing Feng; Yue-Feng Liu; Yu-Qing Zhong; Yu Bai; Yu Jin; Guo-Hua Xie; Qin Xue; Yi Zhao; Shi-Yong Liu; Hong-Bo Sun // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223306
Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to...
- Imaging the dissociation process of O2 background gas during pulsed laser ablation of LiNbO3. Epurescu, G.; Siegel, J.; Gonzalo, J.; Gordillo-Vázquez, F. J.; Afonso, C. N. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211501
The dynamics and the reactivity of the plasma produced during pulsed laser ablation of LiNbO3 have been investigated. Optical emission spectroscopy combined with time-gated imaging with high spatial resolution is applied to the study of the factors that influence the plasma expansion process,...
- CuInS2–CdS heterojunction valence band offset measured with near-UV constant final state yield spectroscopy. Johnson, B.; Korte, L.; Lußky, T.; Klaer, J.; Lauermann, I. // Journal of Applied Physics;Oct2009, Vol. 106 Issue 7, p073712
The valence band offset of the heterojunction between CuInS2 (CIS) and chemical bath deposited CdS has been determined both by means of combined x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) and by near-UV constant final state (CFS) yield spectroscopy....
- On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Barnes, Teresa M.; Olson, Kyle; Wolden, Colin A. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p112112
The behavior of nitrogen in ZnO thin films grown by high-vacuum plasma-assisted chemical vapor deposition is examined. Highly oriented (002) films doped with 0–2 at. % N were characterized by x-ray photoelectron spectroscopy, x-ray diffraction (XRD), Seebeck, and Hall measurements. XRD...
- A comparison of plasma-activated N2/O2 and N2O/O2 mixtures for use in ZnO:N synthesis by chemical vapor deposition. Barnes, T. M.; Leaf, J.; Hand, S.; Fry, C.; Wolden, C. A. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7036
A high-vacuum plasma-assisted chemical-vapor deposition system was used to systematically study ZnO:N thin film synthesis. Nitrogen doping was achieved by mixing either N2O or N2 with O2 in a high-density inductively coupled plasma (ICP) source. In situ diagnostics showed that the ICP...
- Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p–n homojunction structure. Kumar, Manoj; Kar, Jyoti Prakash; In-Soo Kim; Se-Young Choi; Jae-Min Myoung // Applied Physics A: Materials Science & Processing;Nov2009, Vol. 97 Issue 3, p689
Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in...
- Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer. Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou // Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193505
Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced...
