TITLE

Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films

AUTHOR(S)
Zheng, Y. B.; Wang, S. J.; Huan, A. C. H.; Tan, C. Y.; Yan, L.; Ong, C. K.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p112910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Al2O3-incorporation effect on the crystal structure and band structure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 substrate has been investigated by x-ray diffraction, x-ray photoelectron spectroscopy, and UV-VIS spectrophotometer. The resultant band gaps (Eg) increase with the increase of Al concentration. The shift of the valence-band edge and the core-level spectra with the incorporation of Al indicates that the Al could reduce the oxygen vacancy concentration.
ACCESSION #
16581597

 

Related Articles

  • Mn12-acetate film pattern generated by photolithography methods. Kim, K.; Seo, D. M.; Means, J.; Meenakshi, V.; Teizer, W.; Zhao, H.; Dunbar, K. R. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3872 

    We demonstrate a straightforward way to lithographically fabricate Mn12-acetate thin film patterns on Si/SiO2 surfaces, a significant step in light of the chemical volatility of this organic complex. Atomic force micrographs show low surface roughness. X-ray photoelectron spectroscopy data and...

  • Band alignment in ultrathin Hf–Al–O/Si interfaces. Jin, H.; Oh, S. K.; Kang, H. J.; Lee, S. W.; Lee, Y. S.; Cho, M.-H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212902 

    Band alignment in Hf–Al–O thin films, grown on Si(100) by atomic layer deposition, was determined via x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The changes in conduction band offset, valence band offset, and bandgap were obtained as a...

  • Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer. Dan-Dan Zhang; Jing Feng; Yue-Feng Liu; Yu-Qing Zhong; Yu Bai; Yu Jin; Guo-Hua Xie; Qin Xue; Yi Zhao; Shi-Yong Liu; Hong-Bo Sun // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223306 

    Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to...

  • Imaging the dissociation process of O2 background gas during pulsed laser ablation of LiNbO3. Epurescu, G.; Siegel, J.; Gonzalo, J.; Gordillo-Vázquez, F. J.; Afonso, C. N. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211501 

    The dynamics and the reactivity of the plasma produced during pulsed laser ablation of LiNbO3 have been investigated. Optical emission spectroscopy combined with time-gated imaging with high spatial resolution is applied to the study of the factors that influence the plasma expansion process,...

  • CuInS2–CdS heterojunction valence band offset measured with near-UV constant final state yield spectroscopy. Johnson, B.; Korte, L.; Lußky, T.; Klaer, J.; Lauermann, I. // Journal of Applied Physics;Oct2009, Vol. 106 Issue 7, p073712 

    The valence band offset of the heterojunction between CuInS2 (CIS) and chemical bath deposited CdS has been determined both by means of combined x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) and by near-UV constant final state (CFS) yield spectroscopy....

  • On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Barnes, Teresa M.; Olson, Kyle; Wolden, Colin A. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p112112 

    The behavior of nitrogen in ZnO thin films grown by high-vacuum plasma-assisted chemical vapor deposition is examined. Highly oriented (002) films doped with 0–2 at. % N were characterized by x-ray photoelectron spectroscopy, x-ray diffraction (XRD), Seebeck, and Hall measurements. XRD...

  • A comparison of plasma-activated N2/O2 and N2O/O2 mixtures for use in ZnO:N synthesis by chemical vapor deposition. Barnes, T. M.; Leaf, J.; Hand, S.; Fry, C.; Wolden, C. A. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7036 

    A high-vacuum plasma-assisted chemical-vapor deposition system was used to systematically study ZnO:N thin film synthesis. Nitrogen doping was achieved by mixing either N2O or N2 with O2 in a high-density inductively coupled plasma (ICP) source. In situ diagnostics showed that the ICP...

  • Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p–n homojunction structure. Kumar, Manoj; Kar, Jyoti Prakash; In-Soo Kim; Se-Young Choi; Jae-Min Myoung // Applied Physics A: Materials Science & Processing;Nov2009, Vol. 97 Issue 3, p689 

    Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in...

  • Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer. Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou // Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193505 

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics