Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films

Zheng, Y. B.; Wang, S. J.; Huan, A. C. H.; Tan, C. Y.; Yan, L.; Ong, C. K.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p112910
Academic Journal
The Al2O3-incorporation effect on the crystal structure and band structure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 substrate has been investigated by x-ray diffraction, x-ray photoelectron spectroscopy, and UV-VIS spectrophotometer. The resultant band gaps (Eg) increase with the increase of Al concentration. The shift of the valence-band edge and the core-level spectra with the incorporation of Al indicates that the Al could reduce the oxygen vacancy concentration.


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