TITLE

Using local band structure to image strain in semiconductor microstructures

AUTHOR(S)
Stievater, T. H.; Rabinovich, W. S.; Park, D.; Goetz, Peter G.; Boos, J. B.; Katzer, D. S.; Biermann, M. L.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111915
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that polarization-specific nonlinear optical spectroscopy combined with an accurate band structure model can be used to provide a noncontact image of the strain fields within a micromachined quantum well. Optical measurements of the heavy hole excitonic transition strength and anisotropy are converted into measurements of the in-plane strain components with an 8-band k·p model that includes deformation potentials. The resulting two-dimensional strain image is in excellent agreement with a finite-element structural model of the microstructure, demonstrating the validity of this technique.
ACCESSION #
16581581

 

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